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2N5191 2N5192
NPN power transistors
Features
NPN transistors
Applications
Linear and switching industrial equipment
1
Description
The devices are manufactured in Planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type of 2N5192 is 2N5195. Figure 1.
3
SOT-32
2
Internal schematic diagram
Table 1.
Devices summary
Marking 2N5191 2N5192 Package SOT-32 SOT-32 Packaging Tube Tube
Order code 2N5191 2N5192
June 2007
Rev 3
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Electrical ratings
2N5191 2N5192
1
Electrical ratings
Table 2.
Symbol
Absolute maximum rating
Parameter Value 2N5191 2N5192 80 80 5 4 7 1 40 -65 to 150 150 V V V A A A W C C Unit
VCBO VCEO VEBO IC ICM IB PTOT Tstg TJ
Collector-base voltage (IE = 0) Collector-base voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current Base current Total dissipation at T case = 25C Storage temperature Max. operating junction temperature
60 60
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2N5191 2N5192
Electrical characteristics
2
Electrical characteristics
(Tcase = 25C unless otherwise specified) Table 3.
Symbol ICBO ICEX ICEO IEBO
Electrical characteristics
Parameter Collector cut-off current (IE = 0) Collector cut-off current (VBE = -1.5V) Collector cut-off current (IB = 0) Emitter cut-off current (IC = 0) Test Conditions VCB = rated VCBO VCE = rated VCEO VCE = rated VCEO Tc=125C VCE = rated VCEO VEB = 5V IC =100mA for 2N5191 for 2N5192 IC = 1.5A IC = 4A _ IB = 0.15A _ IB = 1A Min. Typ. Max. 0.1 0.1 2 1 1 Unit mA mA mA mA mA
Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) VCE(sat) (1) VBE (1) Collector-emitter saturation voltage Base-emitter voltage
60 80 0.6 1.4 1.2
V V V V V
IC = 1.5A _ _ V CE = 2V IC = 1.5A _ _ V CE =2V for 2N5191 for 2N5192 V CE =2V IC =4A for 2N5191 for 2N5192
25 20 10 7
100 80
hFE
DC current gain
Note (1) Pulsed duration = 300 s, duty cycle 1.5%
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Electrical characteristics
2N5191 2N5192
2.1
Electrical characteristic (curves)
Figure 2. DC current gain Figure 3. DC current gain
Figure 4.
Collector-emitter saturation voltage
Figure 5.
Base-emitter saturation voltage
Figure 6.
Base-emitter on voltage
Figure 7.
Resistive load switching time
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2N5191 2N5192 Figure 8. Resistive load switching time
Electrical characteristics
2.2
Test circuit
Figure 9. Resistive load switching test circuit
1) Fast electronic switch 2) Non-inductive resistor
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Package mechanical data
2N5191 2N5192
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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2N5191 2N5192
Package mechanical data
SOT-32 (TO-126) MECHANICAL DATA
DIM. A B B1 D E e e1 L P Q Q1 H2 I 1 2.15 1.27 mm. MIN. 2.4 0.64 0.39 10.5 7.4 2.04 4.07 15.3 2.9 3.8 1.52 2.29 4.58 TYP MAX. 2.9 0.88 0.63 11.05 7.8 2.54 5.08 16 3.2
0016114E
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Revision history
2N5191 2N5192
4
Revision history
Table 4.
Date 01-Dec-2000 14-Jan-2004 28-Jun-2007
Revision history
Revision 1 2 3 Initial release. Technical migration from ST-Press to EDOCS Figures 2,3,4,5,6,7, 8 and figure 9 have been added. Changes
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2N5191 2N5192
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